Abstract: We present a low-temperature flip-chip-based mounting technology, enabling integration of indium phosphide (InP)-based chiplets on BiCMOS. The process temperatures of well below 200°C allow ...

The monolithic integration of RF-MEMS with SiGe-BiCMOS technology opens the door to the creation of low-cost, highly integrated circuits. From there, the technology can power radar and imaging ...

Department of Electrical and Computer Engineering and Texas Analog Center of Excellence, The University of Texas at Dallas, Richardson, Texas 75080, United States More by Kenneth K. O Article Views ...

In an effort to gain a competitive edge in the cost-sensitive wireless communications arena, STMicroelectronics has added silicon-germanium (SiGe) biCMOS to its arsenal of process technologies. The ...

To extend its BiCOM biCMOS process into the next generation, Texas Instruments is tapping the benefits of complementary silicon-germanium (SiGe) bipolar transistors. TI has developed a third ...

Abstract: For fast switching off of a firing single-photon avalanche diode (SPAD), an active quenching circuit in 0.35-$\mu \text{m}$ BiCMOS technology with a very fast quenching slew rate is ...

Team achieves 200 Gbps at a rate by integrated travelling-wave SiGe BiCMOS transimpedance amplifier with a silicon photonics Ge photodetector At the European Conference on Optical Communication (ECOC) ...

X-FAB Silicon Foundries has announced a further expansion of its partnership with the Leibniz Institute for High Performance Microelectronics (IHP). The leading analog/mixed-signal and specialty ...

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Most of today’s CMOS/BiCMOS designs for terahertz applications target the circuit blocks. This is especially true of the terahertz fundamental-frequency oscillators. In an impressive feat, however, ...