ARLINGTON, Va., June 03, 2026--(BUSINESS WIRE)--JEDEC Solid State Technology Association, the global leader in standards development for the microelectronics industry, announced the publication of ...

Suppliers of gallium nitride (GaN) and silicon carbide (SiC) power devices are rolling out the next wave of products with some new and impressive specs. But before these devices are incorporated in ...

Silicon carbide (SiC) has proven to be the ideal material for high power and high voltage devices. However, it is extremely important that devices be reliable, and we are not only referring to ...

When it comes to reliability research on SiC power devices, The Ohio State University (OSU) has been at the vanguard. Several aspects of the SiC power MOSFET reliability, including threshold voltage ...

The development of wide bandgap silicon carbide (SiC) compound semiconductors has proved to be extremely beneficial for power conversion applications. Capable of switching at significantly higher ...

The impact of materials on designing reliable devices. How packaging plays an important role in SiC MOSFET design. Determining the FIT rate for SiC MOSFETs. There’s no doubt that the material ...

Thanks to their performance characteristics [1], [2], silicon carbide (SiC) power devices are establishing themselves on the market as valid replacements for MOSFETs and IGBTs based on silicon ...